We present atomistic valence force field calculations of thermal transport in si nanowires of diameters from 12 nm down to 1 nm we show that as the diameter is reduced, the phonon density-of-states and transmission function acquire a finite value at low frequency, in contrast to approaching zero as in the bulk material. [email protected] (+98) 21- 77240492 dr hamid behnam [email protected] ir (+98) 21- 77240492 mohammad ali beygi - (+98) 21- 77240492 dr javad poshtan [email protected] (+98) 21- 77240492 mohammad taghi pourfath - (+98) 21- 77240492 dr mohammad reza jahedmotlagh [email protected] Flexible phototransistors based on graphene nanoribbon decorated with mos2 nanoparticles mohsen asad , sedigheh salimian , mohammad hossein sheikhi , mahdi pourfath sensors and actuators a: physical 2015 232, 285-291. New two diemensional structures nanoribbon including phosphorus and germanium atoms are introduced for the nanoelectronic applications under various bias voltages, the electronic transport in the systems have been studied within the noneqilibrium green's function formalism the i − v characteristics. Abstract—carbon-based electronics is an emerging field its present progress is largely dominated by the materials science community due to the many still existing materials-related obstacles for realizing practically competitive transistors com- pared to graphene, carbon nanotubes provide better proper.
Thesis title: exploration of improved sensing capabilities of zno/go and zno/ mos2 heterostructures by manipulating the photocatalytic and piezoelectric properties 50) k khaliji, m noei, s m tabatabaei, m pourfath, m fathipour, and y abdi tunable bandgap in bilayer armchair graphene nanoribbons: concurrent. Sanaz nazemi,1 mahdi pourfath,1,2,a) ebrahim asl soleimani,1 and hans kosina2 1school of electrical and thesis of singlet oxygen21 and quenching of porous silicon photoluminescence by molecular oxygen iii discusses the a) electronic addresses: [email protected] and [email protected] Vertical tunneling transistor based on graphene–mos 2 heterostructure a horri, r faez, m pourfath, g darvish ieee transactions on electron devices 64 ( 8), 3459-3465, 2017 2017 a computational study of vertical tunneling transistors based on graphene-ws2 heterostructure a horri, r faez, m pourfath, g darvish.
86) a zubair, “fabrication of graphene-on-gan vertical transistors”, mater thesis at mit 85) gholipour, m masoumi, n chen, yc chen, d pourfath, m, “ asymmetric gate schottky-barrier graphene nanoribbon fets for low-power design,” electron devices, ieee transactions on , vol61, no12, pp4000,4006, dec. 1997 doctoral dissertation this dissertation describes the implementation of squads and some significant investigations conducted with this simulation tool mahdi pourfath , hans kosina, fast convergent schrödinger-poisson solver for the static and dynamic analysis of carbon nanotube field effect transistors. Numerical study of quantum transport in carbon nanotube based transistors ausgeführt zum zwecke der erlangung des akademischen grades eines doktors der technischen wissenschaften eingereicht an der technischen universität wien fakultät für elektrotechnik und informationstechnik von mahdi pourfath.
Lattice dynamics of layered transition metal dichalcogenides [thesis] 1983 wakabayashi n, smith hg, nicklow rm elahi m, khaliji k, tabatabaei sm, pourfath m, asgari r modulation of electronic and mechanical properties of phosphorene through strain physical review b 201491:115412 ong zy. Mahdi pourfath hans kosina siegfried selberherr published online: 18 january 2007 c springer science + business media, llc 2007 abstract based on the non-equilibrium green's function formalism we numerically studied gate- controlled tunneling carbon nanotube field-effect transistors the effect of doping. Essay questions for ap english literature situational leadership analysis essay expository essay language techniques narrative essay about the zoo essay issue social thousand two word college essays about race.
Journal homepage: wwwelseviercom/locate/sna high-performance infrared photo-transistor based on swcnt decorated with pbs nanoparticles mohsen asada,∗, morteza fathipourb, mohammad hossein sheikhia, mahdi pourfathb,c a school of electrical and computer engineering, shiraz university. His ms thesis was entitled “material preparation, characterization, conduction modeling, and electronic applications of polymer matrix composites” his bs degree was in electrical engineering (electronics) and from the university of tabriz (iran) his ms thesis supervisor was dr mahdi pourfath (assistant professor.